2017-2018 SunLED Catalog - page 30

www.SunLEDusa.com
IR & PHOTO
28
INFRARED EMITTING DIODE
Part Number Chip Structure lpeak (nm)
Po(mW/sr)
IF=20mA,50mA* Viewing Angle
2θ1/2 Lens
Min. Typ.
3mm
XTNI30W GaAs 940 3 7 50° Water Clear
*8 *14
XTNI30BF GaAs 940 3 7 50° Blue Transparent
*8 *14
XTHI30W GaAlAs 880 3 15 50° Water Clear
*5 *19
XTHI30BF GaAlAs 880 3 15 50° Blue Transparent
*5 *19
XTHI30W850 GaAlAs 850 8 15 50° Water Clear
*15 *49
XTHI30BF850 GaAlAs 850 8 15 50° Blue Transparent
*15 *49
5mm
XTNI12W GaAs 940 8 19 20° Water Clear
*25 *49
XTNI12BF GaAs 940 8 19 20° Blue Transparent
*25 *49
XTHI12W GaAlAs 880 6 14 20° Water Clear
*12 *24
XTHI12BF GaAlAs 880 6 14 20° Blue Transparent
*12 *24
XTHI12W850 GaAlAs 850 12 29 20° Water Clear
*40 *89
XTHI12BF850 GaAlAs 850 12 29 20° Blue Transparent
*40 *89
1. Dimension Unit: mm(inches), Tolerance: ±0.25mm (0.01").
2. Radiant intensity value and wavelength are in accordance with CIE127-2007 standards.
3. We reserve the right to make changes at any time to enhance the design and / or performance of the product.
INFRARED EMITTING DIODE